DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, JY | - |
dc.contributor.author | Ryu, S | - |
dc.contributor.author | Park, YC | - |
dc.contributor.author | Lim, YT | - |
dc.contributor.author | Shin, YS | - |
dc.contributor.author | Shin, YH | - |
dc.contributor.author | Jang, HM | - |
dc.date.accessioned | 2016-04-01T02:26:27Z | - |
dc.date.available | 2016-04-01T02:26:27Z | - |
dc.date.created | 2011-02-07 | - |
dc.date.issued | 2010-12 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.other | 2011-OAK-0000022714 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25135 | - |
dc.description.abstract | We demonstrate a field-effect nonvolatile memory device made of a ferroelectric copolymer gate nanodot and a single-walled carbon nanotube (SW-CNT). A position-controlled dip-pen nanolithography was performed to deposit a poly(vinylidene fluoride-ran-trifluoroethylene) (PVDF-TrFE) nanodot onto the SW-CNT channel with both a source and drain for field-effect transistor (FET) function. PVDF-TrFE was chosen as a gate dielectric nanodot in order to efficiently exploit its bipolar chemical nature. A piezoelectric force microscopy study confirmed the canonical ferroelectric responses of the PVDF-TrFE nanodot fabricated at the center of the SWOT channel. The two distinct ferroelectric polarization states with the stable current retention and fatigue-resistant characteristics make the present PVDF-TrFE-based FET suitable for nonvolatile memory applications. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS NANO | - |
dc.subject | ferroelectric polymer nanodot | - |
dc.subject | carbon nanotube | - |
dc.subject | field-effect transistor | - |
dc.subject | nonvolatile memory device | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | COPOLYMERS | - |
dc.subject | MECHANISM | - |
dc.subject | ARRAYS | - |
dc.title | A Nonvolatile Memory Device Made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | - |
dc.identifier.doi | 10.1021/NN1021296 | - |
dc.author.google | Son, JY | - |
dc.author.google | Ryu, S | - |
dc.author.google | Park, YC | - |
dc.author.google | Lim, YT | - |
dc.author.google | Shin, YS | - |
dc.author.google | Shin, YH | - |
dc.author.google | Jang, HM | - |
dc.relation.volume | 4 | - |
dc.relation.issue | 12 | - |
dc.relation.startpage | 7315 | - |
dc.relation.lastpage | 7320 | - |
dc.contributor.id | 10084272 | - |
dc.relation.journal | ACS NANO | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS NANO, v.4, no.12, pp.7315 - 7320 | - |
dc.identifier.wosid | 000285449100032 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 7320 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 7315 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 4 | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.identifier.scopusid | 2-s2.0-78650728728 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 50 | - |
dc.description.scptc | 50 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | COPOLYMERS | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordAuthor | ferroelectric polymer nanodot | - |
dc.subject.keywordAuthor | carbon nanotube | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | nonvolatile memory device | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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