Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser deposition
SCIE
SCOPUS
- Title
- Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser deposition
- Authors
- Park, JY; Je, JH; Kim, SS
- Date Issued
- 2010-12-01
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Heteroepitaxial ZnO films were grown by pulsed laser deposition on various substrates such as GaN-buffered C-Al2O3 C-Al2O3 A-Al2O3 and R-Al2O3 The epitaxy nature of the films was investigated mainly by synchrotron X-ray diffraction The results showed that the GaN interlayer plays a positive role in growing an unstrained well-aligned epitaxial ZnO film on the basal plane of Al2O3 Importantly the ZnO film grown on R-Al2O3 has two differently aligned domains The dominant (1 1 0) oriented domain has much better alignment in the in-plane direction than the minor portion of (0 0 1) oriented domain while in the out-of-plane direction the two domains have almost the same mosaic distribution (C) 2010 Elsevier B V All rights reserved
- Keywords
- X ray diffraction; Laser epitaxy; Zinc compounds; Semiconducting II-VI materials; Light emitting diodes; LIGHT-EMITTING DIODE; PHOTOLUMINESCENCE PROPERTIES; THIN-FILMS; EPITAXY; SUBSTRATE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25215
- DOI
- 10.1016/J.JCRYSGRO.2010.09.034
- ISSN
- 0022-0248
- Article Type
- Article
- Citation
- JOURNAL OF CRYSTAL GROWTH, vol. 312, no. 24, page. 3588 - 3591, 2010-12-01
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- There are no files associated with this item.
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