DC Field | Value | Language |
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dc.contributor.author | Lim, G | - |
dc.contributor.author | Park, CS | - |
dc.contributor.author | Lyu, HK | - |
dc.contributor.author | Kim, DS | - |
dc.contributor.author | Jeong, YT | - |
dc.contributor.author | Park, HJ | - |
dc.contributor.author | Kim, HS | - |
dc.contributor.author | Shin, JK | - |
dc.contributor.author | Choi, P | - |
dc.contributor.author | Lee, JH | - |
dc.date.accessioned | 2016-04-01T02:29:13Z | - |
dc.date.available | 2016-04-01T02:29:13Z | - |
dc.date.created | 2010-12-28 | - |
dc.date.issued | 2003-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2003-OAK-0000022523 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25223 | - |
dc.description.abstract | As micro-fluidic systems and biochemical detection systems are scaled to smaller dimensions, the realization of small and portable biochemical detection systems has become increasingly important. In this paper, we propose a 3-dimensional structure of a metal oxide semiconductor field-effect transistor(3-D MOSFET) using tetramethyl ammonium hydroxide (TMAH) anisotropic etching, which is a suitable device for combining with a micro-fluidic system. After fabricating a trapezoidal micro-fluidic channel, the 3-D MOSFET embodied in the convex corner of the micro-fluidic channel was fabricated. The length of the gate is about 20 mum and the width is about 9 mum. The depth and top width of the trapezoidal micro-fluidic channel are about 8 mum and 60 mum, respectively. The measured drain saturation current of the 3-D MOSFET was about -22 muA at VGs = -5 V and V-DS = -5 V, and the device characteristics exhibit a typical MOSFET behavior. Moreover, a gold layer was used for the MOSFET's gate metal to detect charged biochemical samples using the affinity between gold and thiol. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.subject | 3-dimensional structure | - |
dc.subject | convex corner | - |
dc.subject | micro-fluidic channel | - |
dc.subject | 3-D MOSFET | - |
dc.title | Fabrication of 3-Dimensional Structure of Metal Oxide Semiconductor Field Effect Transistor Embodied in the Convex Corner of the Silicon Micro-Fluidic Channel | - |
dc.type | Article | - |
dc.contributor.college | 융합생명공학부 | - |
dc.identifier.doi | 10.1143/JJAP.42.4089 | - |
dc.author.google | Lim, G | - |
dc.author.google | Park, CS | - |
dc.author.google | Lyu, HK | - |
dc.author.google | Kim, DS | - |
dc.author.google | Jeong, YT | - |
dc.author.google | Park, HJ | - |
dc.author.google | Kim, HS | - |
dc.author.google | Shin, JK | - |
dc.author.google | Choi, P | - |
dc.author.google | Lee, JH | - |
dc.relation.volume | 42 | - |
dc.relation.issue | 6B | - |
dc.relation.startpage | 4089 | - |
dc.relation.lastpage | 4092 | - |
dc.contributor.id | 10097203 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.42, no.6B, pp.4089 - 4092 | - |
dc.identifier.wosid | 000184373400075 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 4092 | - |
dc.citation.number | 6B | - |
dc.citation.startPage | 4089 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 42 | - |
dc.contributor.affiliatedAuthor | Lim, G | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | 3-dimensional structure | - |
dc.subject.keywordAuthor | convex corner | - |
dc.subject.keywordAuthor | micro-fluidic channel | - |
dc.subject.keywordAuthor | 3-D MOSFET | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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