Structural and Electrical Properties of SiGe-on-Insulator Substrates Fabricated by Direct Bonding
SCIE
SCOPUS
- Title
- Structural and Electrical Properties of SiGe-on-Insulator Substrates Fabricated by Direct Bonding
- Authors
- Grekhov, IV; Kostina, LS; Argunova, TS; Belyakova, EI; Rozkov, AV; Shmidt, NM; Yusupova, SA; Je, JH
- Date Issued
- 2010-08
- Publisher
- MAIK NAUKA/INTERPERIODICA/SPRINGER
- Abstract
- A new method for fabricating SiGe-on-insulator substrates, i.e., direct bonding of thermally oxidized Si wafers with Si(1-x)Ge(x) wafers cut from Czochralski-grown crystals, is suggested. Si(1-x)Ge(x) layers no larger than 10 mu m thick in SiGe/SiO(2)/Si compositions were fabricated by chemical mechanical polishing. To increase the Ge content in the Si(1-x)Ge(x) layer, thermal oxidation was used. It was shown that the increase in the Ge content and heat treatment procedures at 1250 degrees C are not accompanied by degradation of structural and electrical characteristics of Si(1-x)Ge(x) layers.
- Keywords
- CZOCHRALSKI GROWTH; SILICON STRUCTURES; SI1-XGEX CRYSTALS; HOLE MOBILITY; STRAINED-SI; TECHNOLOGY; GE; SURFACE; LAYERS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25373
- DOI
- 10.1134/S1063782610080269
- ISSN
- 1063-7826
- Article Type
- Article
- Citation
- SEMICONDUCTORS, vol. 44, no. 8, page. 1101 - 1105, 2010-08
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- There are no files associated with this item.
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