The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
SCIE
SCOPUS
- Title
- The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
- Authors
- Park, MS; Lee, KT; Kang, CY; Choi, GB; Sagong, HC; Sohn, CW; Min, BG; Oh, J; Majhi, P; Tseng, HH; Lee, JC; Lee, JS; Jammy, R; Jeong, YH
- Date Issued
- 2010-10
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- We present a comparative study of the effects of a Si capping layer on SiGe channel pMOSFETs used for radio-frequency (RF) applications. In Si-capped devices, the drive current increases because Si/SiGe heterojunction layers form a SiGe quantum well, which reduces carrier scattering. Conversely, SiGe samples without a Si capping layer suffer severe interface degradation, due to Ge diffusing into the gate dielectric. Devices using a Si capping layer have enhanced RF performance and reduced low-frequency noise, which is a key factor affecting phase noise. There is an increase in the RF figures of merit. These benefits indicate that a Si capping layer should be used in SiGe channel pMOSFETs.
- Keywords
- Figure of merit (FOM); Ge out-diffusion; radio-frequency (RF) measurement; Si cap layer; SiGe pMOSFET; PERFORMANCE; QUALITY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25379
- DOI
- 10.1109/LED.2010.2061212
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 31, no. 10, page. 1104 - 1106, 2010-10
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- There are no files associated with this item.
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