Plasma-Enhanced Atomic Layer Deposition of Ni

Abstract

Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)(2)] as a precursor and NH3 or H-2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H-2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H-2, probably due to the effects of NHx radicals. (C) 2010 The Japan Society of Applied Physics