DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, HS | - |
dc.contributor.author | Lim, H | - |
dc.contributor.author | Song, HJ | - |
dc.contributor.author | Shin, HJ | - |
dc.contributor.author | Park, SM | - |
dc.contributor.author | Choi, HC | - |
dc.date.accessioned | 2016-04-01T02:39:49Z | - |
dc.date.available | 2016-04-01T02:39:49Z | - |
dc.date.created | 2010-11-24 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.other | 2010-OAK-0000022052 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25544 | - |
dc.description.abstract | Spontaneous oxidation of C-60 by Au ions was observed. When C-60 was guided to make contacts with Au3+ ions in aqueous HAuCl4 solution, electrons were spontaneously transferred from C-60 to Au3+ ions, resulting in hole (h(+)) doped C-60 cations and Au nanoparticles on a C-60 layer. This spontaneous electron transfer occurs due to the galvanic displacement from C-60 to Au3+ ions owing to the energy difference between Fermi energy level of C-60 (-4.7 eV) and standard reduction potential of Au3+ ion (+1.002 V). The oxidation of C-60 as well as the consequent formation of reduced Au nanoparticles were confirmed by atomic force microscopy, X-ray photoelectron spectroscopy, and electrochemistry. The switch of majority charge carrier type from electron to hole and its stability in air were also confirmed by monitoring I-V-g characteristic curves of a C-60 field effect transistor (FET) device before and after the reaction with Au3+ ions. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.title | Spontaneous electron transfer from C-60 to Au ions: oxidation of C-60 and hole doping | - |
dc.type | Article | - |
dc.contributor.college | 화학과 | - |
dc.identifier.doi | 10.1039/C0JM00783H | - |
dc.author.google | Shin, HS | - |
dc.author.google | Lim, H | - |
dc.author.google | Song, HJ | - |
dc.author.google | Shin, HJ | - |
dc.author.google | Park, SM | - |
dc.author.google | Choi, HC | - |
dc.relation.volume | 20 | - |
dc.relation.issue | 34 | - |
dc.relation.startpage | 7183 | - |
dc.relation.lastpage | 7188 | - |
dc.contributor.id | 10200281 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY, v.20, no.34, pp.7183 - 7188 | - |
dc.identifier.wosid | 000281109700018 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 7188 | - |
dc.citation.number | 34 | - |
dc.citation.startPage | 7183 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.volume | 20 | - |
dc.contributor.affiliatedAuthor | Park, SM | - |
dc.contributor.affiliatedAuthor | Choi, HC | - |
dc.identifier.scopusid | 2-s2.0-77955810152 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 4 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | FILMS | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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