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Cited 10 time in webofscience Cited 12 time in scopus
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dc.contributor.authorShin, HS-
dc.contributor.authorLim, H-
dc.contributor.authorSong, HJ-
dc.contributor.authorShin, HJ-
dc.contributor.authorPark, SM-
dc.contributor.authorChoi, HC-
dc.date.accessioned2016-04-01T02:39:49Z-
dc.date.available2016-04-01T02:39:49Z-
dc.date.created2010-11-24-
dc.date.issued2010-01-
dc.identifier.issn0959-9428-
dc.identifier.other2010-OAK-0000022052-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/25544-
dc.description.abstractSpontaneous oxidation of C-60 by Au ions was observed. When C-60 was guided to make contacts with Au3+ ions in aqueous HAuCl4 solution, electrons were spontaneously transferred from C-60 to Au3+ ions, resulting in hole (h(+)) doped C-60 cations and Au nanoparticles on a C-60 layer. This spontaneous electron transfer occurs due to the galvanic displacement from C-60 to Au3+ ions owing to the energy difference between Fermi energy level of C-60 (-4.7 eV) and standard reduction potential of Au3+ ion (+1.002 V). The oxidation of C-60 as well as the consequent formation of reduced Au nanoparticles were confirmed by atomic force microscopy, X-ray photoelectron spectroscopy, and electrochemistry. The switch of majority charge carrier type from electron to hole and its stability in air were also confirmed by monitoring I-V-g characteristic curves of a C-60 field effect transistor (FET) device before and after the reaction with Au3+ ions.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.relation.isPartOfJOURNAL OF MATERIALS CHEMISTRY-
dc.titleSpontaneous electron transfer from C-60 to Au ions: oxidation of C-60 and hole doping-
dc.typeArticle-
dc.contributor.college화학과-
dc.identifier.doi10.1039/C0JM00783H-
dc.author.googleShin, HS-
dc.author.googleLim, H-
dc.author.googleSong, HJ-
dc.author.googleShin, HJ-
dc.author.googlePark, SM-
dc.author.googleChoi, HC-
dc.relation.volume20-
dc.relation.issue34-
dc.relation.startpage7183-
dc.relation.lastpage7188-
dc.contributor.id10200281-
dc.relation.journalJOURNAL OF MATERIALS CHEMISTRY-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS CHEMISTRY, v.20, no.34, pp.7183 - 7188-
dc.identifier.wosid000281109700018-
dc.date.tcdate2019-02-01-
dc.citation.endPage7188-
dc.citation.number34-
dc.citation.startPage7183-
dc.citation.titleJOURNAL OF MATERIALS CHEMISTRY-
dc.citation.volume20-
dc.contributor.affiliatedAuthorPark, SM-
dc.contributor.affiliatedAuthorChoi, HC-
dc.identifier.scopusid2-s2.0-77955810152-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc6-
dc.description.scptc4*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusFILMS-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-

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