Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film
SCIE
SCOPUS
- Title
- Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film
- Authors
- Ha, H; Kim, O
- Date Issued
- 2010-04
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- The effect of various electrode materials has been studied for organic nonvolatile memory devices using a poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) thin film. The bottom electrodes (BEs) were indium tin oxide (ITO) and Al, while the top electrodes (TEs) were Al, Ti, Cr, ITO, Au, Ni, Pd, and Pt. The ITO/PEDOT:PSS/TE devices only had a bipolar switching behavior, while the Al/PEDOT:PSS/TE devices did not have any switching behavior unless a compliance current (CC) was used in the write-operation method. Then, they had a unipolar switching behavior irregardless of the TE material. Therefore, the BE material and the CC have crucial roles in the switching behavior and characteristics.
- Keywords
- Switches; Indium tin oxide; Electrodes; Nonvolatile memory; Polymers; Gold; various electrode materials; Compliance current (CC); nonvolatile memory devices; poly(3; 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film; THIN-FILMS; POLYMER
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25603
- DOI
- 10.1109/LED.2010.2041182
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 31, no. 4, page. 368 - 370, 2010-04
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