DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, KS | - |
dc.contributor.author | Jung, SC | - |
dc.contributor.author | Kang, MH | - |
dc.contributor.author | Yeom, HW | - |
dc.date.accessioned | 2016-04-01T02:45:22Z | - |
dc.date.available | 2016-04-01T02:45:22Z | - |
dc.date.created | 2010-11-22 | - |
dc.date.issued | 2010-06-16 | - |
dc.identifier.issn | 0031-9007 | - |
dc.identifier.other | 2010-OAK-0000021786 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25708 | - |
dc.description.abstract | We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have a nearly linear dispersion with an effective mass about 20 times lighter than bulk Si and comparable to graphene. The reduction of mass can be accounted for by a repulsive interaction between neighboring bands of the metal film and Si substrate. Our result suggests a promising way to take advantage of massless carriers in silicon-based thin-film devices, which can also be applied to various other semiconductor devices. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.relation.isPartOf | PHYSICAL REVIEW LETTERS | - |
dc.title | Nearly Massless Electrons in the Silicon Interface with a Metal Film | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1103/PHYSREVLETT.104.246803 | - |
dc.author.google | Kim, KS | - |
dc.author.google | Jung, SC | - |
dc.author.google | Kang, MH | - |
dc.author.google | Yeom, HW | - |
dc.relation.volume | 104 | - |
dc.relation.issue | 24 | - |
dc.contributor.id | 10105469 | - |
dc.relation.journal | PHYSICAL REVIEW LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW LETTERS, v.104, no.24 | - |
dc.identifier.wosid | 000278853500001 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 24 | - |
dc.citation.title | PHYSICAL REVIEW LETTERS | - |
dc.citation.volume | 104 | - |
dc.contributor.affiliatedAuthor | Kang, MH | - |
dc.contributor.affiliatedAuthor | Yeom, HW | - |
dc.identifier.scopusid | 2-s2.0-77953692910 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 23 | - |
dc.description.scptc | 25 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TOPOLOGICAL-INSULATOR | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | SUPERCONDUCTIVITY | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | SI(111) | - |
dc.subject.keywordPlus | SURFACE | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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