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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chung, A | - |
| dc.contributor.author | Deen, J | - |
| dc.contributor.author | Lee, JS | - |
| dc.contributor.author | Meyyappan, M | - |
| dc.date.accessioned | 2016-04-01T02:47:39Z | - |
| dc.date.available | 2016-04-01T02:47:39Z | - |
| dc.date.created | 2010-09-14 | - |
| dc.date.issued | 2010-10-15 | - |
| dc.identifier.issn | 0957-4484 | - |
| dc.identifier.other | 2010-OAK-0000021585 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25776 | - |
| dc.description.abstract | This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO2. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | IOP | - |
| dc.relation.isPartOf | NANOTECHNOLOGY | - |
| dc.subject | RANDOM-ACCESS MEMORY | - |
| dc.subject | PHASE-CHANGE MEMORY | - |
| dc.subject | FIELD-EFFECT TRANSISTORS | - |
| dc.subject | NAND FLASH MEMORY | - |
| dc.subject | MOLECULAR ELECTRONICS | - |
| dc.subject | NONVOLATILE MEMORY | - |
| dc.subject | ELECTRICAL-PROPERTIES | - |
| dc.subject | SWITCHING PHENOMENA | - |
| dc.subject | CHANGE NANOWIRES | - |
| dc.subject | THIN-FILM | - |
| dc.title | Nanoscale Memory Devices | - |
| dc.type | Article | - |
| dc.contributor.college | 정보전자융합공학부 | - |
| dc.identifier.doi | 10.1088/0957-4484/21/41/412001 | - |
| dc.author.google | Chung, A | - |
| dc.author.google | Deen, J | - |
| dc.author.google | Lee, JS | - |
| dc.author.google | Meyyappan, M | - |
| dc.relation.volume | 21 | - |
| dc.relation.issue | 41 | - |
| dc.relation.startpage | 412001-1 | - |
| dc.relation.lastpage | 412001-22 | - |
| dc.contributor.id | 10084860 | - |
| dc.relation.journal | NANOTECHNOLOGY | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.21, no.41, pp.412001-1 - 412001-22 | - |
| dc.identifier.wosid | 000281958600002 | - |
| dc.date.tcdate | 2019-02-01 | - |
| dc.citation.endPage | 412001-22 | - |
| dc.citation.number | 41 | - |
| dc.citation.startPage | 412001-1 | - |
| dc.citation.title | NANOTECHNOLOGY | - |
| dc.citation.volume | 21 | - |
| dc.contributor.affiliatedAuthor | Lee, JS | - |
| dc.identifier.scopusid | 2-s2.0-77958609807 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 65 | - |
| dc.description.scptc | 53 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Review | - |
| dc.subject.keywordPlus | RANDOM-ACCESS MEMORY | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
| dc.subject.keywordPlus | MOLECULAR ELECTRONICS | - |
| dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
| dc.subject.keywordPlus | SWITCHING PHENOMENA | - |
| dc.subject.keywordPlus | THIN-FILM | - |
| dc.subject.keywordPlus | NANOTUBE | - |
| dc.subject.keywordPlus | NANOWIRES | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
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- 이정수LEE, JEONG SOO
- Dept of Electrical Enginrg