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Cited 3 time in webofscience Cited 3 time in scopus
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dc.contributor.authorJun-Hyun Bae-
dc.contributor.authorSang-Hune Park-
dc.contributor.authorSim, JY-
dc.contributor.authorPark, HJ-
dc.date.accessioned2016-04-01T02:48:11Z-
dc.date.available2016-04-01T02:48:11Z-
dc.date.created2010-04-26-
dc.date.issued2009-03-
dc.identifier.issn1598-1657-
dc.identifier.other2010-OAK-0000021564-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/25791-
dc.description.abstractA digital differential transmitter based on CMOS inverter worked up to 2.8 Gbps at the supply voltage of 1 V with a 0.18 mu m CMOS process. By calibrating the output impedance of the transmitter, the impedance matching between the transmitter output and the transmission line is achieved. The PVT variations of pre-driver are compensated by the calibration of the rising-edge delay and falling-edge delay of the pre-driver outputs. The chip fabricated with a 0.18 gm CMOS process, which uses the standard supply voltage of 1.8 V, gives the highest data rate of 4 Gbps at the supply voltage of 1.2 V. The proposed calibration schemes improve the eye opening with the voltage margin by 200% and the timing margin by 30%, at 2.8 Gbps and 1 V.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisher대한전자공학회-
dc.relation.isPartOfJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.subjectTransmitter-
dc.subjectdigital-
dc.subjectdifferential-
dc.subjecttermination-
dc.subjectinverter-based-
dc.subjectlow voltage-
dc.titleA Low-Voltage High-Speed CMOS Inverter-Based Digital Differential Transmitter with Impedance Matching Control and Mismatch Calibration-
dc.typeArticle-
dc.contributor.college정보전자융합공학부-
dc.identifier.doi10.5573/JSTS.2009.9.1.014-
dc.author.googleBae J.-H.-
dc.author.googlePark S.-H.-
dc.author.googleSim J.-Y.-
dc.author.googlePark H.-J.-
dc.relation.volume9-
dc.relation.issue1-
dc.relation.startpage14-
dc.relation.lastpage21-
dc.contributor.id10071836-
dc.relation.journalJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCIE-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.9, no.1, pp.14 - 21-
dc.identifier.wosid000207899500004-
dc.date.tcdate2019-02-01-
dc.citation.endPage21-
dc.citation.number1-
dc.citation.startPage14-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume9-
dc.contributor.affiliatedAuthorSim, JY-
dc.contributor.affiliatedAuthorPark, HJ-
dc.identifier.scopusid2-s2.0-65349156410-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc3-
dc.type.docTypeArticle-
dc.subject.keywordAuthorTransmitter-
dc.subject.keywordAuthordigital-
dc.subject.keywordAuthordifferential-
dc.subject.keywordAuthortermination-
dc.subject.keywordAuthorinverter-based-
dc.subject.keywordAuthorlow voltage-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-

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박홍준PARK, HONG JUNE
Dept of Electrical Enginrg
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