DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JS | - |
dc.contributor.author | Sim, JY | - |
dc.contributor.author | Park, HJ | - |
dc.contributor.author | 박홍준 | - |
dc.date.accessioned | 2016-04-01T02:49:09Z | - |
dc.date.available | 2016-04-01T02:49:09Z | - |
dc.date.issued | 2010-08 | - |
dc.identifier.citation | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.identifier.citation | v.E93-C | - |
dc.identifier.citation | no.8 | - |
dc.identifier.citation | pp.1333-1337 | - |
dc.identifier.issn | 0916-8524 | - |
dc.identifier.other | 2010-OAK-0000021518 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25817 | - |
dc.description.abstract | A high-throughput on-chip monitoring circuit with a digital output is proposed for the variations of the NMOS and PMOS threshold voltages. A voltage-controlled delay line (VCDL) and a time-to-digital converter (TDC) are used to convert a small difference in analog voltage into a large difference in time delay. This circuit was applied to the transistors of W = 10 mu m and L = 0.18 mu m in a 16 x 16 array matrix fabricated with a 0.18-mu m process. The measurement of the threshold voltage shows that the maximum peak-to-peak intra-chip variation of NMOS and PMOS transistors are about 31.7 mV and 32.2 mV, respectively, for the temperature range from -25 degrees C to 75 degrees C. The voltage resolutions of NMOS and PMOS transistors are measured to be 1.10 mV/bit and 3.53 mV/bit at 25 degrees C, respectively. The 8-bit digital code is generated for the threshold voltage of a transistor in every 125 ns, which corresponds to the 8-MHz throughput. | - |
dc.description.statementofresponsibility | X | - |
dc.publisher | IEICE TRANS. ELECTRON | - |
dc.subject | on-chip variation monitoring | - |
dc.subject | threshold voltage | - |
dc.subject | time-to-digital converter (TDC) | - |
dc.subject | voltage controlled delay line (VCDL) | - |
dc.title | A High-Throughput On-Chip Variation Monitoring Circuit for MOSFET Threshold Voltage using VCDL and Time-to-Digital Converter | - |
dc.type | Conference | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.1587/TRANSELE.E93 | - |
dc.author.google | Lee, JS | - |
dc.author.google | Sim, JY | - |
dc.author.google | Park, HJ | - |
dc.relation.volume | E93-C | - |
dc.relation.issue | 8 | - |
dc.relation.startpage | 1333 | - |
dc.relation.lastpage | 1337 | - |
dc.contributor.id | 10071836 | - |
dc.publisher.location | US | - |
dc.relation.journal | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.docType | Conference Paper | - |
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