DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, YS | - |
dc.contributor.author | Lee, MW | - |
dc.contributor.author | Kam, SH | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-04-01T02:49:13Z | - |
dc.date.available | 2016-04-01T02:49:13Z | - |
dc.date.created | 2010-09-08 | - |
dc.date.issued | 2010-02 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.other | 2010-OAK-0000021516 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25819 | - |
dc.description.abstract | A high-linearity wideband analog predistortion power amplifier (PA) is presented. The memory effects of the PA are reduced by a high drain bias voltage as well as a wide bias line and several decoupling capacitors. The simple cascaded third-order analog predistorters (CTAPDs) are used to cancel the third-and fifth-order intermodulations (IM3s and IM5s) of the low-memory PA. For verification, the 45 W class-AB PA is implemented and tested using a two-tone signal and a four-carrier wideband code division multiple access (WCDMA) signals at 2.14 GHz. From the measured results, the low-memory PA with the CTAPDs delivers significant IM3 and IM5 cancellation and superior ACLR improvement. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.subject | Analog predistorter (APD) | - |
dc.subject | drain bias | - |
dc.subject | linearity | - |
dc.subject | memory effects | - |
dc.subject | power amplifier (PA) | - |
dc.subject | WCDMA APPLICATIONS | - |
dc.title | A High-Linearity Wideband Power Amplifier With Cascaded Third-Order Analog Predistorters | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.1109/LMWC.2009.2038557 | - |
dc.author.google | Lee, YS | - |
dc.author.google | Lee, MW | - |
dc.author.google | Kam, SH | - |
dc.author.google | Jeong, YH | - |
dc.relation.volume | 20 | - |
dc.relation.issue | 2 | - |
dc.relation.startpage | 112 | - |
dc.relation.lastpage | 114 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.20, no.2, pp.112 - 114 | - |
dc.identifier.wosid | 000274395200018 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 114 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 112 | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 20 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-76749131090 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 9 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Analog predistorter (APD) | - |
dc.subject.keywordAuthor | drain bias | - |
dc.subject.keywordAuthor | linearity | - |
dc.subject.keywordAuthor | memory effects | - |
dc.subject.keywordAuthor | power amplifier (PA) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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