Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors

Abstract

We report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an antiferromagnetic hysteresis loop for a high resistive state (R-OFF). However, for a low resistive state (R-ON), the conducting filaments exhibited a ferromagnetic hysteresis loop for the field cooling. The ferromagnetic hysteresis behavior of the R-ON state reveals switchable exchange coupling between the ferromagnetic Ni conducting filaments and the antiferromagnetic NiO layer.