Article
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Cited 95 time in 
Cited 95 time in
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoon, SM | - |
| dc.contributor.author | Song, HJ | - |
| dc.contributor.author | Choi, HC | - |
| dc.date.accessioned | 2016-04-01T02:50:06Z | - |
| dc.date.available | 2016-04-01T02:50:06Z | - |
| dc.date.created | 2010-08-09 | - |
| dc.date.issued | 2010-05-18 | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.other | 2010-OAK-0000021449 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25844 | - |
| dc.description.abstract | Novel p-type semiconductors can be found in these extraordinary comb structures. The GeSe combs are selectively formed by a vaporization-condensation-recrystallization (VCR) process using bulk GeSe powder as the precursor source. They have a flat body plate part and extended wire finger parts, both of which have identical crystal structures. The GeSe comb field-effect transistor device displays both p-type semiconducting and photo-switching behavior. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.relation.isPartOf | ADVANCED MATERIALS | - |
| dc.subject | ELECTRICAL-PROPERTIES | - |
| dc.subject | SINGLE-CRYSTALS | - |
| dc.subject | ESHELBY TWIST | - |
| dc.subject | NANOWIRES | - |
| dc.subject | GROWTH | - |
| dc.title | p-Type Semiconducting GeSe Combs by a Vaporization-Condensation-Recrystallization (VCR) Process | - |
| dc.type | Article | - |
| dc.contributor.college | 첨단재료과학부 | - |
| dc.identifier.doi | 10.1002/ADMA.200903719 | - |
| dc.author.google | Yoon, SM | - |
| dc.author.google | Song, HJ | - |
| dc.author.google | Choi, HC | - |
| dc.relation.volume | 22 | - |
| dc.relation.issue | 19 | - |
| dc.relation.startpage | 2164 | - |
| dc.relation.lastpage | + | - |
| dc.contributor.id | 10104219 | - |
| dc.relation.journal | ADVANCED MATERIALS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.22, no.19, pp.2164 - + | - |
| dc.identifier.wosid | 000278601400010 | - |
| dc.date.tcdate | 2019-02-01 | - |
| dc.citation.endPage | + | - |
| dc.citation.number | 19 | - |
| dc.citation.startPage | 2164 | - |
| dc.citation.title | ADVANCED MATERIALS | - |
| dc.citation.volume | 22 | - |
| dc.contributor.affiliatedAuthor | Choi, HC | - |
| dc.identifier.scopusid | 2-s2.0-77952998969 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 51 | - |
| dc.description.scptc | 43 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
| dc.subject.keywordPlus | SINGLE-CRYSTALS | - |
| dc.subject.keywordPlus | ESHELBY TWIST | - |
| dc.subject.keywordPlus | NANOWIRES | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 최희철CHOI, HEE CHEUL
- Dept of Chemistry