DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, YK | - |
dc.contributor.author | Umar, A | - |
dc.contributor.author | Kim, JS | - |
dc.contributor.author | Yang, HY | - |
dc.contributor.author | Lee, JS | - |
dc.contributor.author | Hahn, YB | - |
dc.date.accessioned | 2016-04-01T02:52:01Z | - |
dc.date.available | 2016-04-01T02:52:01Z | - |
dc.date.created | 2010-12-06 | - |
dc.date.issued | 2009-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.other | 2010-OAK-0000021361 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25896 | - |
dc.description.abstract | The electrical properties of single ZnO nanowire were examined by fabricating single nanowire based field effect transistors (FETs) via two approaches, i.e., back- and top-gate approaches by using electron beam lithography (EBL) and photolithography processes. The ZnO nanowires were synthesized by non-catalytic simple thermal evaporation process by using metallic zinc powder in the presence of oxygen. The as-grown ZnO nanowires were characterized in terms of their structural and optical properties which confirmed that the grown nanowires are well-crystallized with the wurtzite hexagonal phase and exhibiting good optical properties. The peak transconductances of the back- and top-gate FETs were similar to 3.2 and similar to 7.4 nS, respectively. The field effect mobilities (mu(eff)) for the back- and top-gate FETs were measured to be 3.4 and 7.87 cm(2)/V.s, respectively. Our studies conclude that the fabricated top-gate FETs exhibited higher and good electrical properties as compared to ZnO nanowire FETs fabricated using back-gate approaches. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.subject | ZnO Nanowires | - |
dc.subject | Field Effect Transistors | - |
dc.subject | Optical and Electrical Properties | - |
dc.subject | THERMAL EVAPORATION | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | GROWTH-MECHANISM | - |
dc.subject | CHEMICAL SENSOR | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | NANOBELTS | - |
dc.subject | NANORODS | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | FABRICATION | - |
dc.title | Single ZnO Nanowire Based High-Performance Field Effect Transistors (FETs) | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.1166/JNN.2009.1252 | - |
dc.author.google | Park, YK | - |
dc.author.google | Umar, A | - |
dc.author.google | Kim, JS | - |
dc.author.google | Yang, HY | - |
dc.author.google | Lee, JS | - |
dc.author.google | Hahn, YB | - |
dc.relation.volume | 9 | - |
dc.relation.issue | 10 | - |
dc.relation.startpage | 5839 | - |
dc.relation.lastpage | 5844 | - |
dc.contributor.id | 10084860 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, no.10, pp.5839 - 5844 | - |
dc.identifier.wosid | 000269310700023 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 5844 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 5839 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 9 | - |
dc.contributor.affiliatedAuthor | Lee, JS | - |
dc.identifier.scopusid | 2-s2.0-70350342731 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.description.scptc | 8 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THERMAL EVAPORATION | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | GROWTH-MECHANISM | - |
dc.subject.keywordPlus | CHEMICAL SENSOR | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | NANOBELTS | - |
dc.subject.keywordPlus | NANORODS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | ZnO Nanowires | - |
dc.subject.keywordAuthor | Field Effect Transistors | - |
dc.subject.keywordAuthor | Optical and Electrical Properties | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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