Crack-free interface in wafer-bonded Ge/Si by patterned grooves
SCIE
SCOPUS
- Title
- Crack-free interface in wafer-bonded Ge/Si by patterned grooves
- Authors
- Argunova, TS; Gutkin, MY; Kostina, LS; Grekhov, IV; Belyakova, EI; Je, JH
- Date Issued
- 2010-03
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- Crack-free Interfaces can be achieved in wafer-bonded Ge/Si by using Patterned grooves Using synchrotron radiation phase-contrast Imaging and scanning electron microscopy, we observed cracking that is Induced by thermal stresses in thin (h(Ge) <= 0 5h(Si)) Ge wafers on smooth Si substrates Theoretical calculation shows it remarkable reduction in thermal stresses in Ge wafer bonded to grooved Si substrate We demonstrate the fabrication of crack-free Ge/Si (h(Ge) = 0 5h(Si)) structure by patterned grooves, its confirmed by in ohmic I-V characteristic across the heterojunction (C) 2009 Acta Materialia Inc Published by Elsevier Ltd All rights reserved
- Keywords
- Direct wafer bonding; Dislocations; Cracks; Synchrotron imaging; Models of crystal defects; SI; FILMS; GE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/26043
- DOI
- 10.1016/J.SCRIPTAMAT.2009.11.041
- ISSN
- 1359-6462
- Article Type
- Article
- Citation
- SCRIPTA MATERIALIA, vol. 62, no. 6, page. 407 - 410, 2010-03
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- There are no files associated with this item.
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