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Cited 116 time in webofscience Cited 0 time in scopus
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dc.contributor.authorLee, WH-
dc.contributor.authorLim, JA-
dc.contributor.authorKwak, D-
dc.contributor.authorCho, JH-
dc.contributor.authorLee, HS-
dc.contributor.authorChoi, HH-
dc.contributor.authorCho, K-
dc.date.accessioned2016-04-01T03:03:22Z-
dc.date.available2016-04-01T03:03:22Z-
dc.date.created2010-04-28-
dc.date.issued2009-11-13-
dc.identifier.issn0935-9648-
dc.identifier.other2009-OAK-0000020827-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/26193-
dc.description.abstractA one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in a segregation and crystal formation of TES-ADT at the air-film interface after spin-casting and subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting and dielectric layers and exhibit high performances.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.relation.isPartOfADVANCED MATERIALS-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectPHASE-SEPARATION-
dc.subjectPOLYMER-
dc.subjectPERFORMANCE-
dc.subjectMORPHOLOGY-
dc.subjectINTERFACES-
dc.subjectTRANSPORT-
dc.subjectMOBILITY-
dc.subjectBINARY-
dc.titleSemiconductor-Dielectric Blends: A Facile All Solution Route to Flexible All-Organic Transistors-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1002/ADMA.200900277-
dc.author.googleLee, WH-
dc.author.googleLim, JA-
dc.author.googleKwak, D-
dc.author.googleCho, JH-
dc.author.googleLee, HS-
dc.author.googleChoi, HH-
dc.author.googleCho, K-
dc.relation.volume21-
dc.relation.issue42-
dc.relation.startpage4243-
dc.relation.lastpage+-
dc.contributor.id10077904-
dc.relation.journalADVANCED MATERIALS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.21, no.42, pp.4243 - +-
dc.identifier.wosid000272503600006-
dc.date.tcdate2019-02-01-
dc.citation.endPage+-
dc.citation.number42-
dc.citation.startPage4243-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume21-
dc.contributor.affiliatedAuthorCho, K-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc73-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusPHASE-SEPARATION-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusMORPHOLOGY-
dc.subject.keywordPlusMOBILITY-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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