Cost-effective laser interference lithography using a 405 nm AlInGaN semiconductor laser
SCIE
SCOPUS
- Title
- Cost-effective laser interference lithography using a 405 nm AlInGaN semiconductor laser
- Authors
- Ikjoo Byun; Kim, J
- Date Issued
- 2010-05
- Publisher
- IOP
- Abstract
- This paper presents a cost-effective interference lithography system that uses a 405 nm AlInGaN semiconductor laser. This method is cost-effective because the AlInGaN semiconductor laser has a long coherence length (similar to 20 m) and low price (e. g. only 1/3 that of the HeCd laser). This system successfully fabricated uniform nano-periodic patterns (line, dot and hole) in a photoresist (PR) over a 2 x 2 cm sample area. The PR patterns agreed well with simulations. Tall silicon nano-structures were fabricated by deep reactive ion etching (DRIE) using a PR pattern as a direct etch mask layer. Aspect ratios of 25 with smooth and vertical sidewalls were achieved after 32 DRIE cycles.
- Keywords
- FABRICATION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/26222
- DOI
- 10.1088/0960-1317/20/5/055024
- ISSN
- 0960-1317
- Article Type
- Article
- Citation
- JOURNAL OF MICROMECHANICS AND MICROENGINEERING, vol. 20, no. 5, page. 55024 - 55024, 2010-05
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