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Cited 11 time in webofscience Cited 10 time in scopus
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dc.contributor.authorHan, JH-
dc.contributor.authorKim, HS-
dc.contributor.authorHwang, HN-
dc.contributor.authorKim, B-
dc.contributor.authorChung, S-
dc.contributor.authorChung, JW-
dc.contributor.authorHwang, CC-
dc.date.accessioned2016-04-01T03:12:01Z-
dc.date.available2016-04-01T03:12:01Z-
dc.date.created2010-04-14-
dc.date.issued2009-12-
dc.identifier.issn1098-0121-
dc.identifier.other2010-OAK-0000020533-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/26380-
dc.description.abstractWe have investigated atomic structure and electrical properties of the Au/Si(557)-1x2 surface by using scanning tunneling microscopy. We observe the doubled periodicity (x2) for the step-edge atoms even far away from defects at room temperature (RT), indicating no Peierls-type transition reported earlier. We further identify the Au atoms well resolved from Si atoms in the Au-Si-Au chain at RT, in good accord with the prevailing structural model. Our scanning tunneling spectroscopy data taken along the step-edge atoms unambiguously reveal that these step-edge Si atoms are metallic, and are buckled apparently with a charge transferred from down to up Si atoms. We find no significant thermal fluctuation of the buckled step edges at RT.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.titleDirect evidence of the step-edge buckling at the Au/Si(557)-1x2 surface-
dc.typeArticle-
dc.contributor.college물리학과-
dc.identifier.doi10.1103/PHYSREVB.80.241401-
dc.author.googleHan, JH-
dc.author.googleKim, HS-
dc.author.googleHwang, HN-
dc.author.googleKim, B-
dc.author.googleChung, S-
dc.author.googleChung, JW-
dc.author.googleHwang, CC-
dc.relation.volume80-
dc.relation.issue24-
dc.relation.startpage241401-
dc.relation.lastpage241401-
dc.contributor.id10071841-
dc.relation.journalPHYSICAL REVIEW B-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.80, no.24, pp.241401 - 241401-
dc.identifier.wosid000273229200028-
dc.date.tcdate2019-02-01-
dc.citation.endPage241401-
dc.citation.number24-
dc.citation.startPage241401-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume80-
dc.contributor.affiliatedAuthorChung, S-
dc.contributor.affiliatedAuthorChung, JW-
dc.identifier.scopusid2-s2.0-77954707327-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc11-
dc.description.scptc9*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordAuthorband structure-
dc.subject.keywordAuthorbuckling-
dc.subject.keywordAuthorcharge exchange-
dc.subject.keywordAuthorcrystal defects-
dc.subject.keywordAuthorgold-
dc.subject.keywordAuthormetal-insulator transition-
dc.subject.keywordAuthorPeierls instability-
dc.subject.keywordAuthorscanning tunnelling microscopy-
dc.subject.keywordAuthorscanning tunnelling spectroscopy-
dc.subject.keywordAuthorsilicon-
dc.subject.keywordAuthorsurface conductivity-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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