Magnetoresistance and Magnetization of Heteroepitaxial InMnP:Zn Layer

Abstract

The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the lnMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization Curve and the electron diffraction pattern of transmission electron microscopy.