DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HBR | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Kim, H | - |
dc.contributor.author | Kim, WH | - |
dc.contributor.author | Lee, JW | - |
dc.contributor.author | Hwang, I | - |
dc.contributor.author | null | - |
dc.date.accessioned | 2016-04-01T03:33:18Z | - |
dc.date.available | 2016-04-01T03:33:18Z | - |
dc.date.issued | 2010-01 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.identifier.citation | v.56 | - |
dc.identifier.citation | no.1 | - |
dc.identifier.citation | pp.104-107 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.other | 2010-OAK-0000020052 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/26594 | - |
dc.description.abstract | The effects of plasma on the degradation of the deposition blocking layer during area-selective atomic layer deposition were investigated. Co atomic layer deposition (ALD) processes were developed by using Co(iPr-AMD)(2) (bis (N,N'-diisopropylacetamidinato)cobalt(II)) as a precursor, and two different reactants, NH3 gas for thermal ALD (TH-ALD) and NH3 plasma for plasma-enhanced ALD (PE-ALD). TH- and PE-ALD were applied to area selective ALD (AS-ALD) by using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a blocking layer. Both ALD processes produced pure Go films with resistivities as low as 50 mu Omega cm. For PE-ALD, however, no selective deposition was achieved due to a degradation of the OTS hydrophobicity caused by the NH3 plasma exposure. The effects of the plasma on the blocking efficiency of SAM were studied. | - |
dc.description.statementofresponsibility | X | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | Atomic layer deposition | - |
dc.subject | Cobalt | - |
dc.subject | Area-selective deposition | - |
dc.subject | Self-assembled monolayer | - |
dc.subject | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject | THIN-FILMS | - |
dc.subject | METAL | - |
dc.subject | KINETICS | - |
dc.title | Degradation of the Deposition Blocking Layer During Area-Selective Plasma-Enhanced Atomic Layer Deposition of Cobalt | - |
dc.type | Article | - |
dc.identifier.doi | 10.3938/JKPS.56.104 | - |
dc.author.google | Lee, HBR | - |
dc.author.google | Kim, J | - |
dc.author.google | Kim, H | - |
dc.author.google | Kim, WH | - |
dc.author.google | Lee, JW | - |
dc.author.google | Hwang, I | - |
dc.relation.volume | 56 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 104 | - |
dc.relation.lastpage | 107 | - |
dc.publisher.location | KO | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.docType | Article | - |
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