DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J | - |
dc.contributor.author | Jang, M | - |
dc.contributor.author | An, TK | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Kim, H | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Yang, H | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2016-04-01T07:52:55Z | - |
dc.date.available | 2016-04-01T07:52:55Z | - |
dc.date.created | 2015-06-18 | - |
dc.date.issued | 2015-02 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.other | 2015-OAK-0000032823 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/26975 | - |
dc.description.abstract | The electrical performance of triethylsilylethynyl anthradithiophene (TES-ADT) organic field-effect transistors (OFETs) was significantly affected by dielectric surface polarity controlled by grafting hexamethyldisilazane and dimethyl chlorosilane-terminated polystyrene (PS-Si(CH3)(2)Cl) to 300-nm-thick SiO2 dielectrics. On the untreated and treated SiO2 dielectrics, solvent-vapor annealed TES-ADT films contained millimeter-sized crystals with low grain boundaries (GBs). The operation and bias stability of OFETs containing similar crystalline structures of TES-ADT could be significantly increased with a decrease in dielectric surface polarity. Among dielectrics with similar capacitances (10.5-11 nF cm(-2)) and surface roughnesses (0.40-0.44 nm), the TES-ADT/PS-grafted dielectric interface contained the fewest trap sites and therefore the OFET produced using it had low-voltage operation and a charge-carrier mobility similar to 1.32 cm(2) V (-1) s (-1), on-off current ratio > 10(6), threshold voltage similar to 0 V, and long-term operation stability under negative bias stress. (C) 2014 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.title | Dielectric surface-polarity tuning and enhanced operation stability of solution-processed organic field-effect transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1016/J.ORGEL.2014.11.022 | - |
dc.author.google | Kim, J | - |
dc.author.google | Jang, M | - |
dc.author.google | An, TK | - |
dc.author.google | Kim, S | - |
dc.author.google | Kim, H | - |
dc.author.google | Kim, SH | - |
dc.author.google | Yang, H | - |
dc.author.google | Park, CE | - |
dc.relation.volume | 17 | - |
dc.relation.startpage | 87 | - |
dc.relation.lastpage | 93 | - |
dc.contributor.id | 10104044 | - |
dc.relation.journal | ORGANIC ELECTRONICS | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.17, pp.87 - 93 | - |
dc.identifier.wosid | 000348495400012 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 93 | - |
dc.citation.startPage | 87 | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84919687963 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 5 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | GATE-DIELECTRICS | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | INSULATORS | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | FACILE | - |
dc.subject.keywordAuthor | Organic field-effect transistor | - |
dc.subject.keywordAuthor | Triethylsilylethynyl anthradithiophene | - |
dc.subject.keywordAuthor | Surface polarity | - |
dc.subject.keywordAuthor | Interface charge trap | - |
dc.subject.keywordAuthor | Gate-bias stability | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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