DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, K | - |
dc.contributor.author | Hahm, SG | - |
dc.contributor.author | Kim, Y | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2016-04-01T07:53:05Z | - |
dc.date.available | 2016-04-01T07:53:05Z | - |
dc.date.created | 2015-06-18 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.other | 2015-OAK-0000032818 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/26978 | - |
dc.description.abstract | Organic field-effect transistors (OFETs) were fabricated using polymer blended gate dielectrics in an effort to enhance the electrical stability against a gate bias stress. A poly(melamine-co-formaldehyde) acrylated (PMFA) gate dielectric layer with great insulating properties was blended with polypentafluorostyrene (PFS), a type of hydrophobic fluorinated polymer. Although the overall electrical performance dropped slightly due to the rough and hydrophobic surfaces of the blend films, at the blend ratio (10%), the OFET's threshold voltage shift under a sustained gate bias stress applied over 3 h decreased remarkably compared with an OFET based on a PMFA dielectric alone. This behavior was attributed to the presence of the hydrophobic and electrically stable PFS polymer, which provided a low interfacial trap density between the gate dielectric and the semiconductor. A stretched exponential function model suggested that the energetic barrier to create trap states was high, and the distribution of energetic barrier heights was narrow in devices prepared with PFS. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.title | Realization of electrically stable organic field-effect transistors using simple polymer blended dielectrics | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1016/J.ORGEL.2015.03.005 | - |
dc.author.google | Kim, K | - |
dc.author.google | Hahm, SG | - |
dc.author.google | Kim, Y | - |
dc.author.google | Kim, S | - |
dc.author.google | Kim, SH | - |
dc.author.google | Park, CE | - |
dc.relation.volume | 21 | - |
dc.relation.startpage | 111 | - |
dc.relation.lastpage | 116 | - |
dc.contributor.id | 10104044 | - |
dc.relation.journal | ORGANIC ELECTRONICS | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.21, pp.111 - 116 | - |
dc.identifier.wosid | 000352499100015 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 116 | - |
dc.citation.startPage | 111 | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 21 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84924353069 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 6 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | BIAS STRESS | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE | - |
dc.subject.keywordPlus | PHASE-SEPARATION | - |
dc.subject.keywordPlus | SURFACE-ENERGY | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordAuthor | Organic field-effect transistors (OFETs) | - |
dc.subject.keywordAuthor | Gate dielectrics | - |
dc.subject.keywordAuthor | Fluorinated polymer | - |
dc.subject.keywordAuthor | Gate bias stress | - |
dc.subject.keywordAuthor | Polymer blend | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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