DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jin, S | - |
dc.contributor.author | Kwon, M | - |
dc.contributor.author | Moon, K | - |
dc.contributor.author | Park, B | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-04-01T08:01:44Z | - |
dc.date.available | 2016-04-01T08:01:44Z | - |
dc.date.created | 2015-05-04 | - |
dc.date.issued | 2013-10 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.other | 2013-OAK-0000032583 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27138 | - |
dc.description.abstract | A fully integrated linear CMOS power amplifier (PA) for the broadband operation is developed for handset applications. This amplifier can handle a wideband signal. To achieve broadband/wideband operation, an analysis of the intermodulation distortion for the asymmetric source in a differential cascode structure is presented. Based on the analysis, the linearization technique using a second harmonic circuit at the gate of the common gate is proposed to reduce the asymmetry. The proposed PA with an on-chip transmission-line transformer, which has a broadband matching characteristic, is fabricated using a 0.18-mu m RF CMOS technology. The measurement results show that the sideband asymmetry is less than 0.6 dB for a signal with up to 50-MHz bandwidth, and the peak average power is improved by 1.2 dB within the linearity spec of a 16-QAM 7.5-dB peak-to-average power ratio long-term evolution signal. The PA delivers a power-added efficiency of 36.5%-31.2% and an average output power of 27.5-27.1 dBm under an ACLR(E-UTRA) of -30.5 dBc for a 50-MHz bandwidth signal across 1.4-2.0-GHz carrier frequency. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.title | Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.1109/TMTT.2013.2280116 | - |
dc.author.google | Jin, S | - |
dc.author.google | Kwon, M | - |
dc.author.google | Moon, K | - |
dc.author.google | Park, B | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 61 | - |
dc.relation.issue | 10 | - |
dc.relation.startpage | 3753 | - |
dc.relation.lastpage | 3762 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.61, no.10, pp.3753 - 3762 | - |
dc.identifier.wosid | 000325764600027 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 3762 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3753 | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 61 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-84885916082 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 18 | - |
dc.description.scptc | 16 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | INTERMODULATION DISTORTION | - |
dc.subject.keywordPlus | DIGITAL PREDISTORTION | - |
dc.subject.keywordPlus | BASEBAND IMPEDANCE | - |
dc.subject.keywordPlus | LINEARIZATION | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordAuthor | Adjacent channel leakage ratio (ACLR) | - |
dc.subject.keywordAuthor | broadband | - |
dc.subject.keywordAuthor | cascode | - |
dc.subject.keywordAuthor | CMOS class-AB | - |
dc.subject.keywordAuthor | common gate (CG) | - |
dc.subject.keywordAuthor | differential | - |
dc.subject.keywordAuthor | intermodulation distortion (IMD) | - |
dc.subject.keywordAuthor | linearity | - |
dc.subject.keywordAuthor | linearization | - |
dc.subject.keywordAuthor | linear amplifier | - |
dc.subject.keywordAuthor | long-term evolution (LTE) | - |
dc.subject.keywordAuthor | memory effect | - |
dc.subject.keywordAuthor | power amplifier (PA) | - |
dc.subject.keywordAuthor | third-order intermodulation distortion (IMD3) asymmetry | - |
dc.subject.keywordAuthor | transmission-line transformer (TLT) | - |
dc.subject.keywordAuthor | wideband | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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