DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Y | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Jee, S | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Kim, CH | - |
dc.contributor.author | Park, B | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-04-01T08:02:10Z | - |
dc.date.available | 2016-04-01T08:02:10Z | - |
dc.date.created | 2015-05-04 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.other | 2015-OAK-0000032562 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27146 | - |
dc.description.abstract | This paper presents an approach to maximize the gain and power-added efficiency (PAE) of a Doherty power amplifier (PA) using a 0.25 mu m GaN pHEMT. The conventional carrier PA has an input matching for the R-OPT load and does not deliver the 3 dB higher gain with 2R(OPT) load due to the mismatch and it degrades gain and PAE of the PA. To solve the problem, the input match of the carrier PA is optimized at the back-off power level with the 2R(OPT) output load, while the input is mismatched at a high power level. A Doherty PA with the concept is designed and implemented using a GaN pHEMT MMIC process at 1.8 GHz. The measured average output power, power-added efficiency and gain are 35.6 dBm, 56.3%, and 18.9 dB for a 10 MHz LTE signal with a 6.5 dB PAPR. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.title | GaN HEMT MMIC Doherty Power Amplifier With High Gain and High PAE | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.1109/LMWC.2015.2390536 | - |
dc.author.google | Park, Y | - |
dc.author.google | Lee, J | - |
dc.author.google | Jee, S | - |
dc.author.google | Kim, S | - |
dc.author.google | Kim, CH | - |
dc.author.google | Park, B | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 25 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 187 | - |
dc.relation.lastpage | 189 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.25, no.3, pp.187 - 189 | - |
dc.identifier.wosid | 000351463200015 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 189 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 187 | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 25 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-85027943193 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 5 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2017-08-235 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Doherty power amplifier (DPA) | - |
dc.subject.keywordAuthor | drain efficiency (DE) | - |
dc.subject.keywordAuthor | Gallium nitride (GaN) | - |
dc.subject.keywordAuthor | long term evolution (LTE) | - |
dc.subject.keywordAuthor | power-added efficiency (PAE) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.