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dc.contributor.authorLee J.-H.-
dc.contributor.authorChae B.-K.-
dc.contributor.authorKim J.-J.-
dc.contributor.authorLee S.Y.-
dc.contributor.authorPark C.G.-
dc.contributor.author박찬경-
dc.date.accessioned2016-04-01T08:05:00Z-
dc.date.available2016-04-01T08:05:00Z-
dc.date.issued2015-01-
dc.identifier.citationElectronic Materials Letters-
dc.identifier.citationv.11-
dc.identifier.citationno.1-
dc.identifier.citationpp.60-64-
dc.identifier.issn1738-8090-
dc.identifier.other2015-OAK-0000032184-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/27198-
dc.description.statementofresponsibilityX-
dc.publisherElectron. Mater. Lett-
dc.title3-D Observation of Dopant Distribution at NAND Flash Memory Floating Gate-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1007/S13391-014-4194-3-
dc.author.googleLee J.-H.-
dc.author.googleChae B.-K.-
dc.author.googleKim J.-J.-
dc.author.googleLee S.Y.-
dc.author.googlePark C.G.-
dc.relation.volume11-
dc.relation.issue1-
dc.relation.startpage60-
dc.relation.lastpage64-
dc.contributor.id10069857-
dc.relation.journalElectronic Materials Letters-
dc.relation.sciSCIE-
dc.collections.nameJournal Papers-
dc.type.docTypeArticle-

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