Thermally Phase-Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors
SCIE
SCOPUS
- Title
- Thermally Phase-Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors
- Authors
- Kang, D; Rim, T; Baek, CK; Meyyappan, M; LEE, JEONG SOO
- Date Issued
- 2014-09-24
- Publisher
- Wiley-VCH
- Abstract
- The photoresponse characteristics of In2Se3 nanowire photodetectors with the -phase and -phase structures are investigated. The as-grown -phase In2Se3 nanowires by the vapor-liquid-solid technique are phase-transformed to the -phase nanowires by thermal annealing. The photoresponse performances of the -phase and -phase In2Se3 nanowire photodetectors are characterized over a wide range of wavelengths (300-900 nm). The phase of the nanowires is analyzed using a high-resolution transmission microscopy equipped with energy dispersive X-ray spectroscopy and X-ray diffraction. The electrical conductivity and photoresponse characteristics are significantly enhanced in the -phase due to smaller bandgap structure compared to the -phase nanowires. The spectral responsivities of the -phase devices are 200 times larger than those of the -phase devices. The superior performance of the thermally phase-transformed In2Se3 nanowire devices offers an avenue to develop highly sensitive photodetector applications.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27273
- DOI
- 10.1002/SMLL.201400373
- ISSN
- 1613-6810
- Article Type
- Article
- Citation
- SMALL, vol. 10, no. 18, page. 3795 - 3802, 2014-09-24
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- There are no files associated with this item.
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