Threshold voltage variations due to oblique single grain boundary in sub-50-nm polysilicon channel
SCIE
SCOPUS
- Title
- Threshold voltage variations due to oblique single grain boundary in sub-50-nm polysilicon channel
- Authors
- Kim, J; Rim, T; Lee, J; Baek, CK; Meyyappan, M; LEE, JEONG SOO
- Date Issued
- 2014-08
- Publisher
- IEEE
- Abstract
- We investigate the effect of single grain boundary (SGB) with arbitrary angles on the threshold voltage (V-th) variation in sub-50-nm polysilicon (poly-Si) channel devices using 3-D simulation. An SGB in the poly-Si channel causes changes in potential barrier profile resulting in the variation of V-th. As the planar devices scale down to 20-nm, oblique SGB can significantly increase the whole potential barrier profile and cause large V-th variation. However, due to superior gate controllability, the gate-all-around devices show relatively small increase of the conduction energy band, and thus mitigate the V-th variation even in 20-nm poly-Si channel.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27281
- DOI
- 10.1109/TED.2014.2329848
- ISSN
- 0018-9383
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 61, no. 8, page. 2705 - 2710, 2014-08
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