DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Kim, YR | - |
dc.contributor.author | Hong, JH | - |
dc.contributor.author | Jeong, EY | - |
dc.contributor.author | Yoon, JS | - |
dc.contributor.author | Baek, CK | - |
dc.contributor.author | Kim, DW | - |
dc.contributor.author | LEE, JEONG SOO | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-04-01T08:08:04Z | - |
dc.date.available | 2016-04-01T08:08:04Z | - |
dc.date.created | 2014-07-14 | - |
dc.date.issued | 2014-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2014-OAK-0000030023 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27297 | - |
dc.description.abstract | The low-frequency noise (LFN) of a p-type nanowire FET (p-NWFET) was characterized and compared with that of an n-type NWFET (n-NWFET) in terms of dominant noise source and its location in the channel region. An inverse proportional dependence of the noise level on channel diameter was observed in the p-NWFET but not in the n-NWFET. The LFN was observed to be mainly generated by Hooge mobility fluctuation in the p-NWFET. Under a switched biasing condition, p-NWFET showed no substantial LFN reduction (in contrast to the n-NWFET), indicating that the carrier number fluctuation was insignificant. This was due to the compressive stress induced by embedded SiGe with heavier transverse effective hole mobility. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.title | Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.1109/LED.2014.2323255 | - |
dc.author.google | Lee, S.-H | - |
dc.author.google | Kim, Y.-R | - |
dc.author.google | Hong, J.-H | - |
dc.author.google | Jeong, E.-Y | - |
dc.author.google | Yoon, J.-S | - |
dc.author.google | Baek, C.-K | - |
dc.author.google | Kim, D.-W | - |
dc.author.google | Lee, J.-S | - |
dc.author.google | Jeong, Y.-H. | - |
dc.relation.volume | 35 | - |
dc.relation.issue | 7 | - |
dc.relation.startpage | 702 | - |
dc.relation.lastpage | 704 | - |
dc.contributor.id | 10084860 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.702 - 704 | - |
dc.identifier.wosid | 000338662100005 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 704 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 702 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.contributor.affiliatedAuthor | Baek, CK | - |
dc.contributor.affiliatedAuthor | LEE, JEONG SOO | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-84903714916 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.description.scptc | 2 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Nanowire FET | - |
dc.subject.keywordAuthor | low frequency noise | - |
dc.subject.keywordAuthor | switched biasing 1/f noise | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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