Analysis of reverse tunnelling current in GaInN light-emitting diodes
SCIE
SCOPUS
- Title
- Analysis of reverse tunnelling current in GaInN light-emitting diodes
- Authors
- Cho, J; Mao, A; Kim, JK; Son, JK; Park, Y; Schubert, EF
- Date Issued
- 2010-01-21
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Abstract
- The characteristics of the reverse leakage current of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) are examined with various n-type GaN doping concentrations and interpreted by using a tunnelling current model. Changing the doping concentration of the n-type GaN influences the tunnelling probability of electrons into the conduction band and thus the reverse leakage current. Reducing the doping concentration of the top 150 nm portion of the n-type GaN layer by half decreases the tunnelling probability, resulting in decrease of the reverse leakage current by 80% at -10 V without deterioration of any forward electrical properties of LEDs.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27519
- DOI
- 10.1049/EL.2010.3236
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 46, no. 2, page. 156 - 157, 2010-01-21
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- There are no files associated with this item.
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