Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
SCIE
SCOPUS
- Title
- Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
- Authors
- Lee, S; Kim, H; Yun, DJ; Rhee, SW; Yong, K
- Date Issued
- 2009-12-28
- Publisher
- AMER INST PHYSICS
- Abstract
- This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27545
- DOI
- 10.1063/1.3280864
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 95, no. 26, page. 262113 - 262113, 2009-12-28
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.