HIGHLY LINEAR ANALOG PREDISTORTION POWER AMPLIFIER WITH LOW MEMORY EFFECTS AT HIGH DRAIN BIAS VOLTAGE

Abstract

In this article, we propose a highly linear analog predistortion power amplifier (PA). To successfully use the analog predistorter, memory effects of the PA are si significantly reduced using drain bias circuit with high drain bias voltage as well as widened lambda/4 bias line and several decoupling capacitors. For a two-tone signal and a two-carrier wideband code division multiple access signal, the analog predistortion PA shows the significant IM3 cancellation and ACLR improvement by delivering low memory effects. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 295-299, 2010: Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24909