Open Access System for Information Sharing

Login Library

 

Article
Cited 82 time in webofscience Cited 91 time in scopus
Metadata Downloads

High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors SCIE SCOPUS

Title
High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
Authors
Black, CTGuarini, KWZhang, YKim, HJBenedict, JSikorski, EBabich, IVMilkove, KR
Date Issued
2004-09
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGI
Abstract
We combine nanometer-scale polymer self assembly With advanced semiconductor microfabrication to produce metaloxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The-self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology.
URI
https://oasis.postech.ac.kr/handle/2014.oak/27884
DOI
10.1109/LED.2004.834637
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 25, no. 9, page. 622 - 624, 2004-09
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

김형준KIM, HYUNGJUN
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse