High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
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- Title
- High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
- Authors
- Black, CT; Guarini, KW; Zhang, Y; Kim, HJ; Benedict, J; Sikorski, E; Babich, IV; Milkove, KR
- Date Issued
- 2004-09
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- We combine nanometer-scale polymer self assembly With advanced semiconductor microfabrication to produce metaloxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The-self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27884
- DOI
- 10.1109/LED.2004.834637
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 25, no. 9, page. 622 - 624, 2004-09
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