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Cited 6 time in webofscience Cited 6 time in scopus
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dc.contributor.authorYu, HK-
dc.contributor.authorKim, WK-
dc.contributor.authorLee, JL-
dc.contributor.authorPark, EC-
dc.contributor.authorKim, JS-
dc.contributor.authorRyu, JH-
dc.date.accessioned2016-04-01T08:24:14Z-
dc.date.available2016-04-01T08:24:14Z-
dc.date.created2009-10-08-
dc.date.issued2009-07-
dc.identifier.issn0021-4922-
dc.identifier.other2009-OAK-0000019161-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/27892-
dc.description.abstractDegradation mechanism of secondary electron emission (SEE) properties in plasma-exposed MgO films was studied using three types of plasma ion; He+, Ne+, and Ar+. As the mass of impinging ions increased from He+ to Ar+, the SEE coefficient (gamma) of MgO decreased from 0.0227 to 0.0175. Synchrotron radiation photoemission spectroscopy revealed that the Mg-to-O ratio significantly decreased from 1.00 to 0.79 in He plasma, to 0.73 in Ne plasma, and to 0.66 in Ar plasma. This was due to the preferential sputtering of Mg atoms by the high-mass ions, leading to the production of Mg vacancies (V centers) near the surface of MgO and the decrease in gamma. (C) 2009 The Japan Society of Applied Physics-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherJAPAN SOCIETY APPLIED PHYSICS-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.subjectDISPLAY PANELS-
dc.subjectSURFACE-
dc.subjectDISCHARGE-
dc.subjectION-
dc.titleDegradation Mechanism of Secondary Electron Emission in Plasma-Exposed MgO Films-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1143/JJAP.48.076003-
dc.author.googleYu, HK-
dc.author.googleKim, WK-
dc.author.googleLee, JL-
dc.author.googlePark, EC-
dc.author.googleKim, JS-
dc.author.googleRyu, JH-
dc.relation.volume48-
dc.relation.issue7-
dc.contributor.id10105416-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.7-
dc.identifier.wosid000268546100061-
dc.date.tcdate2019-02-01-
dc.citation.number7-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.volume48-
dc.contributor.affiliatedAuthorLee, JL-
dc.identifier.scopusid2-s2.0-72049119085-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc5-
dc.description.scptc5*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusDISPLAY-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusION-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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