DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sim, JY | - |
dc.contributor.author | Yoon, H | - |
dc.contributor.author | Chun, KC | - |
dc.contributor.author | Lee, HS | - |
dc.contributor.author | Hong, SP | - |
dc.contributor.author | Lee, KC | - |
dc.contributor.author | Yoo, JH | - |
dc.contributor.author | Seo, DI | - |
dc.contributor.author | Cho, SI | - |
dc.date.accessioned | 2016-04-01T08:25:57Z | - |
dc.date.available | 2016-04-01T08:25:57Z | - |
dc.date.created | 2009-10-08 | - |
dc.date.issued | 2003-04 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.other | 2003-OAK-0000019076 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27958 | - |
dc.description.abstract | To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-mum technology. To achieve an ideal 33% efficiency,, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than 2.5 degreesC. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.subject | charge pump | - |
dc.subject | DRAM | - |
dc.subject | sense amplifier | - |
dc.subject | temperature sensor | - |
dc.subject | CIRCUITS | - |
dc.title | A. 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/JSSC.2003.809514 | - |
dc.author.google | Sim, JY | - |
dc.author.google | Yoon, H | - |
dc.author.google | Chun, KC | - |
dc.author.google | Lee, HS | - |
dc.author.google | Hong, SP | - |
dc.author.google | Lee, KC | - |
dc.author.google | Yoo, JH | - |
dc.author.google | Seo, DI | - |
dc.author.google | Cho, SI | - |
dc.relation.volume | 38 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 631 | - |
dc.relation.lastpage | 640 | - |
dc.contributor.id | 10100874 | - |
dc.relation.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.38, no.4, pp.631 - 640 | - |
dc.identifier.wosid | 000181838300007 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 640 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 631 | - |
dc.citation.title | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.citation.volume | 38 | - |
dc.contributor.affiliatedAuthor | Sim, JY | - |
dc.identifier.scopusid | 2-s2.0-0344089098 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 15 | - |
dc.description.scptc | 19 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | charge pump | - |
dc.subject.keywordAuthor | DRAM | - |
dc.subject.keywordAuthor | sense amplifier | - |
dc.subject.keywordAuthor | temperature sensor | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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