Air stable and low temperature evaporable Li3N as a n type dopant in organic light-emitting diodes

Abstract

N doped organic light-emitting diodes were developed by using Li3N as a n type dopant in electron transport layer. Driving voltage was greatly lowered by using Li3N doped electron transport layer and combination of MoO3 doped hole transport layer with Li3N doped electron transport layer gave high quantum efficiency of 15% and low driving voltage of 4V at 1000 cd/m(2) in green phosphorescent organic light-emitting diodes. Decomposition of Li3N during evaporation into Li and N-2 was found to be responsible for n doping effect of Li3N. (C) 2009 Elsevier B.V. All rights reserved.