DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Lee, JW | - |
dc.contributor.author | Park, YJ | - |
dc.contributor.author | Kim, T | - |
dc.date.accessioned | 2016-04-01T08:31:28Z | - |
dc.date.available | 2016-04-01T08:31:28Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1999-02 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.other | 1999-OAK-0000018755 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/28168 | - |
dc.description.abstract | The lowest contact resistivity was achieved by the surface treatment of p-type GaN using KOH solution prior to Pd/Au metal deposition. For the p-type GaN with a hole concentration of 2.9 x 10(16)/cm(3), the contact resistivity decreased from 2.9 x 10(-1) to 7.1 x 10(-3) Ohm cm(2) by the surface treatment. This is the lowest value among the previous results ever reported on the formation of ohmic contacts to p-type GaN. The surface treatment is effective in removing the surface oxides formed on p-type GaN during the epitaxial growth which play a role to inhibit the hole transport from metal to p-type GaN. (C) 1998 Elsevier Science Ltd. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.subject | GALLIUM NITRIDE | - |
dc.title | Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/S0038-1101(98)00265-2 | - |
dc.author.google | Lee, JL | - |
dc.author.google | Kim, JK | - |
dc.author.google | Lee, JW | - |
dc.author.google | Park, YJ | - |
dc.author.google | Kim, T | - |
dc.relation.volume | 43 | - |
dc.relation.issue | 2 | - |
dc.relation.startpage | 435 | - |
dc.relation.lastpage | 438 | - |
dc.contributor.id | 10100864 | - |
dc.relation.journal | SOLID-STATE ELECTRONICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.43, no.2, pp.435 - 438 | - |
dc.identifier.wosid | 000077736000029 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 438 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 435 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 43 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-0033079415 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 68 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
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