DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xi, YA | - |
dc.contributor.author | Chen, KX | - |
dc.contributor.author | Mont, F | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Schubert, EF | - |
dc.contributor.author | Liu, W | - |
dc.contributor.author | Li, X | - |
dc.contributor.author | Smart, JA | - |
dc.date.accessioned | 2016-04-01T08:31:57Z | - |
dc.date.available | 2016-04-01T08:31:57Z | - |
dc.date.created | 2009-09-04 | - |
dc.date.issued | 2007-02-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.other | 2007-OAK-0000018658 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/28186 | - |
dc.description.abstract | Si-doped Al0.3Ga0.7N grown on (0 0 0 I)-oriented sapphire is optimized by using a superlattice (SL) layer. Atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), secondary ion mass spectrometry (SIMS), and Hall effect measurements show that n-type Al0.3Ga0.7N grown on a SL layer gives high-quality crystalline and electrical properties. A 1.8-mu m-thick crack-free n-type Al0.3Ga0.7N layer is demonstrated with a doping concentration of 3 x 1018CM-3, an excellent mobility of 80 cm(2)/(V s), and an RMS roughness of 0.40 nm. Using the SL layer also results in the absence of hexagonal hillocks on the AlGaN surface, which are indicative of a high defect density. The study of an identical n-type Al0.3Ga0.7N layer grown on a low-temperature AIN interlayer shows a lower carrier concentration, mobility, and crystalline quality. (c) 2006 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.subject | metalorganic vapor phase epitaxy | - |
dc.subject | AlGaN | - |
dc.subject | nitride | - |
dc.subject | light emitting diode | - |
dc.subject | GAN | - |
dc.title | Comparative study of n-type AlGaN grown on sapphire by using a superlattice layer and a low-temperature AlN interlayer | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/J.JCRYSGRO.2006.10.253 | - |
dc.author.google | Xi, YA | - |
dc.author.google | Chen, KX | - |
dc.author.google | Mont, F | - |
dc.author.google | Kim, JK | - |
dc.author.google | Schubert, EF | - |
dc.author.google | Liu, W | - |
dc.author.google | Li, X | - |
dc.author.google | Smart, JA | - |
dc.relation.volume | 299 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 59 | - |
dc.relation.lastpage | 62 | - |
dc.contributor.id | 10100864 | - |
dc.relation.journal | JOURNAL OF CRYSTAL GROWTH | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.299, no.1, pp.59 - 62 | - |
dc.identifier.wosid | 000244587600009 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 62 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 59 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 299 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-33846582000 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 14 | - |
dc.description.scptc | 12 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | metalorganic vapor phase epitaxy | - |
dc.subject.keywordAuthor | AlGaN | - |
dc.subject.keywordAuthor | nitride | - |
dc.subject.keywordAuthor | light emitting diode | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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