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Cited 148 time in webofscience Cited 156 time in scopus
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dc.contributor.authorLim, JA-
dc.contributor.authorLee, HS-
dc.contributor.authorLee, WH-
dc.contributor.authorCho, K-
dc.date.accessioned2016-04-01T08:33:19Z-
dc.date.available2016-04-01T08:33:19Z-
dc.date.created2010-05-27-
dc.date.issued2009-05-22-
dc.identifier.issn1616-301X-
dc.identifier.other2009-OAK-0000018471-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/28238-
dc.description.abstractSolution-processable functionalized acenes have received special attention as promising organic semiconductors in recent years because of their superior intermolecular interactions and solution-processability, and provide useful benchmarks for organic field-effect transistors (OFETs). Charge-carrier transport in organic semiconductor thin films is governed by their morphologies and molecular orientation, so self-assembly of these functionalized acenes during solution processing is an important challenge. This article discusses the charge-carrier transport characteristics of solution processed functionalized acene transistors and, in particular, focuses on the fine control of the films' morphologies and structural evolution during film deposition processes such as inkjet printing and post deposition annealing. We discuss strategies for controlling morphologies and crystalline microstructure of soluble acenes with a view of fabricating high performance OFETs.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.relation.isPartOfADVANCED FUNCTIONAL MATERIALS-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectEFFECT MOBILITY-
dc.subjectTRIETHYLSILYLETHYNYL ANTHRADITHIOPHENE-
dc.subjectMOLECULAR-CRYSTALS-
dc.subjectPATTERNED GROWTH-
dc.subjectSINGLE-CRYSTALS-
dc.subjectHOLE MOBILITY-
dc.subjectPENTACENE-
dc.subjectELECTRONICS-
dc.titleControl of the Morphology and Structural Development of Solution-Processed Functionalized Acenes for High-Performance Organic Transistors-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1002/adfm.200801135-
dc.author.googleLim, JA-
dc.author.googleLee, HS-
dc.author.googleLee, WH-
dc.author.googleCho, K-
dc.relation.volume19-
dc.relation.issue10-
dc.relation.startpage1515-
dc.relation.lastpage1525-
dc.contributor.id10077904-
dc.relation.journalADVANCED FUNCTIONAL MATERIALS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationADVANCED FUNCTIONAL MATERIALS, v.19, no.10, pp.1515 - 1525-
dc.identifier.wosid000266626100004-
dc.date.tcdate2019-02-01-
dc.citation.endPage1525-
dc.citation.number10-
dc.citation.startPage1515-
dc.citation.titleADVANCED FUNCTIONAL MATERIALS-
dc.citation.volume19-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-66449086893-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc113-
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusEFFECT MOBILITY-
dc.subject.keywordPlusPATTERNED GROWTH-
dc.subject.keywordPlusSINGLE-CRYSTALS-
dc.subject.keywordPlusHOLE MOBILITY-
dc.subject.keywordPlusPENTACENE-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusPHASE-
dc.subject.keywordPlusORGANIZATION-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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