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Cited 110 time in webofscience Cited 120 time in scopus
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dc.contributor.authorHeo, K-
dc.contributor.authorCho, E-
dc.contributor.authorYang, JE-
dc.contributor.authorKim, MH-
dc.contributor.authorLee, M-
dc.contributor.authorLee, BY-
dc.contributor.authorKwon, SG-
dc.contributor.authorLee, MS-
dc.contributor.authorJo, MH-
dc.contributor.authorChoi, HJ-
dc.contributor.authorHyeon, T-
dc.contributor.authorHong, S-
dc.date.accessioned2016-04-01T08:39:47Z-
dc.date.available2016-04-01T08:39:47Z-
dc.date.created2009-08-20-
dc.date.issued2008-12-
dc.identifier.issn1530-6984-
dc.identifier.other2009-OAK-0000017992-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/28484-
dc.description.abstractWe present a method for assembling silicon nanowires (Si-NWs) in virtually general shape patterns using only conventional microfabrication facilities. In this method, silicon nanowires were functionalized with amine groups and dispersed in deionized water. The functionalized Si-NWs exhibited positive surface charges in the suspensions, and they were selectively adsorbed and aligned onto negatively charged surface regions on solid substrates. As a proof of concepts, we, demonstrated transistors based on individual Si-NWs and long networks of Si-NWs.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.relation.isPartOfNANO LETTERS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectCARBON NANOTUBES-
dc.subjectGOLD ELECTRODE-
dc.subject1/F NOISE-
dc.subjectHETEROSTRUCTURES-
dc.subjectSURFACE-
dc.titleLARGE-SCALE ASSEMBLY OF SILICON NANOWIRE NETWORK-BASED DEVICES USING CONVENTIONAL MICROFABRICATION FACILITIES-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1021/NL802570M-
dc.author.googleDoh, Yong-Joo-
dc.author.googleMaher, Kristin N.-
dc.author.googleOuyang, Lian-
dc.author.googleYu, Chun L.-
dc.author.googlePark, Hongkun-
dc.author.googlePark, Jiwoong-
dc.relation.volume8-
dc.relation.issue12-
dc.relation.startpage4523-
dc.relation.lastpage4527-
dc.contributor.id10176415-
dc.relation.journalNANO LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationNANO LETTERS, v.8, no.12, pp.4523 - 4527-
dc.identifier.wosid000261630700075-
dc.date.tcdate2019-02-01-
dc.citation.endPage4527-
dc.citation.number12-
dc.citation.startPage4523-
dc.citation.titleNANO LETTERS-
dc.citation.volume8-
dc.contributor.affiliatedAuthorJo, MH-
dc.identifier.scopusid2-s2.0-61649092562-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc87-
dc.description.scptc87*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusCARBON NANOTUBES-
dc.subject.keywordPlusGOLD ELECTRODE-
dc.subject.keywordPlus1/F NOISE-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusSURFACE-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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조문호JO, MOON HO
Dept of Materials Science & Enginrg
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