LINEARITY-OPTIMIZED CLASS-E DOHERTY AMPLIFIER BASED ON GaN HEMT

Abstract

In this article, we report the linearity improvement of the GaN HEMT class-E Doherty power amplifier (CEDA). For the linearity improvement, not only the gate biases but also the matching circuits of the carrier and peaking cells are optimally controlled at a pout of 38 dBm, which is a 7-dB back-of power. For a two-tome signal with I-MHZ tone spacing, the IMD3 of - 58 dBc is achieved with a power-added efficiency (PAE) of 45.4%. For a one-carrier WCDMA signal, the PAE of 46.7% is obtained with an ACLR of 32.9 dBc. (c) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 763-766, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24154