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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, YS | - |
| dc.contributor.author | Lee, MW | - |
| dc.contributor.author | Jeong, YH | - |
| dc.date.accessioned | 2016-04-01T08:47:21Z | - |
| dc.date.available | 2016-04-01T08:47:21Z | - |
| dc.date.created | 2009-07-31 | - |
| dc.date.issued | 2009-03 | - |
| dc.identifier.issn | 0895-2477 | - |
| dc.identifier.other | 2009-OAK-0000017040 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/28769 | - |
| dc.description.abstract | A balanced class-E power amplifier (PA) using a push-pull GaN HEMT for high power and high efficiency is represented. For validation, a class-E PA is designed and implemented using a push-pull type GaN HEMT and tested for a single tone of 2.14 GHz. The measured results show that the balanced GaN HEMT class-E PA shows a drain efficiency and power-added efficiency (PAE) of 71% and 67.4% at an output power of 40 W with a gain of 13 dB through the significant harmonic suppression of below -51 dBc. (c) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 842-845, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24150 | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | JOHN WILEY & SONS INC | - |
| dc.relation.isPartOf | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
| dc.subject | class-E power amplifier | - |
| dc.subject | efficiency | - |
| dc.subject | gallium nitride (GaN) | - |
| dc.subject | harmonic | - |
| dc.title | A 40-W BALANCED GaN HEMT CLASS-E POWER AMPLIFIER WITH 71% EFFICIENCY FOR WCDMA BASE STATION | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.identifier.doi | 10.1002/MOP.24150 | - |
| dc.author.google | Lee, YS | - |
| dc.author.google | Lee, MW | - |
| dc.author.google | Jeong, YH | - |
| dc.relation.volume | 51 | - |
| dc.relation.issue | 3 | - |
| dc.relation.startpage | 842 | - |
| dc.relation.lastpage | 845 | - |
| dc.contributor.id | 10106021 | - |
| dc.relation.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.51, no.3, pp.842 - 845 | - |
| dc.identifier.wosid | 000263158200071 | - |
| dc.date.tcdate | 2019-02-01 | - |
| dc.citation.endPage | 845 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 842 | - |
| dc.citation.title | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
| dc.citation.volume | 51 | - |
| dc.contributor.affiliatedAuthor | Jeong, YH | - |
| dc.identifier.scopusid | 2-s2.0-62449195264 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 7 | - |
| dc.description.scptc | 10 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | class-E power amplifier | - |
| dc.subject.keywordAuthor | efficiency | - |
| dc.subject.keywordAuthor | gallium nitride (GaN) | - |
| dc.subject.keywordAuthor | harmonic | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Optics | - |
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- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg