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The fully-integrated CMOS RF power amplifier using the semilumped transformer SCIE SCOPUS

Title
The fully-integrated CMOS RF power amplifier using the semilumped transformer
Authors
Jin, BSHan, KChoi, JKang, DKim, B
Date Issued
2008-11
Publisher
JOHN WILEY & SONS INC
Abstract
A semilumped output transformer for fully-integrated RF CMOS power amplifier is proposed in this paper. To demonstrate this transformer, a 2.5-GHz CMOS power amplifier is implemented with a 0.18-mu m RF CMOS process used for WiMAX application. The power amplifier can achieve 39% PAE (power added efficiency) at P 1dB (1 dB compression point) and output power of 30 dBm. The linearity can satisfy the spectrum mask of the WiMAX signal requirement basically. (c) 2008 Wiley Periodicals, Inc.
Keywords
CMOS; RF power amplifier; semilumped transformer; WiMAX; DISTRIBUTED ACTIVE-TRANSFORMER; DESIGN
URI
https://oasis.postech.ac.kr/handle/2014.oak/28807
DOI
10.1002/MOP.23811
ISSN
0895-2477
Article Type
Article
Citation
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 50, no. 11, page. 2857 - 2860, 2008-11
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김범만KIM, BUM MAN
Dept of Electrical Enginrg
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