An inkjet-printed passivation layer based on a photocrosslinkable polymer for long-term stable pentacene field-effect transistors
SCIE
SCOPUS
- Title
- An inkjet-printed passivation layer based on a photocrosslinkable polymer for long-term stable pentacene field-effect transistors
- Authors
- Nam, S; Jeon, H; Kim, SH; Jang, J; Yang, C; Park, CE
- Date Issued
- 2009-02
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Herein, we investigate the effects of the solvents used in the passivation process on the behavior of pentacene field-effect transistors (FETs) and report on the fabrication of a passivation layer for pentacene FETs via inkjet-printing using photocrosslinkable poly(vinyl alcohol), N-methyl-4(4'formylstyryl) pyridinium methosulfate acetal (SbQ-PVA). The passivated pentacene FETs - composed of inkjet-printed SbQ-PVA containing polystyrene/SiO2 and poly(4-vinyl phenol)/SiO2 dual-layer gate dielectrics - retain their electrical properties for much longer periods than the unpassivated devices. Studies of the device performance show that inkjet-printed passivation is better than spin-coated passivation. (C) 2008 Elsevier B.V. All rights reserved.
- Keywords
- Inkjet-printing; Passivation; Pentacene FETs; Photocrosslinkable polymer; THIN-FILM TRANSISTORS; H2O; AIR
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28980
- DOI
- 10.1016/j.orgel.2008.10.009
- ISSN
- 1566-1199
- Article Type
- Article
- Citation
- ORGANIC ELECTRONICS, vol. 10, no. 1, page. 67 - 72, 2009-02
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