DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, C. | - |
dc.contributor.author | Lee, Y. M. | - |
dc.contributor.author | Shin, H. J. | - |
dc.contributor.author | Jung, M. -C. | - |
dc.contributor.author | Han, M. | - |
dc.contributor.author | Kim, K. | - |
dc.contributor.author | Park, J. C. | - |
dc.contributor.author | Song, S. A. | - |
dc.contributor.author | Jeong, H. | - |
dc.contributor.author | null | - |
dc.date.accessioned | 2016-04-01T08:58:59Z | - |
dc.date.available | 2016-04-01T08:58:59Z | - |
dc.date.issued | 2008-01 | - |
dc.identifier.citation | EUROPEAN PHYSICAL JOURNAL B | - |
dc.identifier.citation | v.66 | - |
dc.identifier.citation | no.2 | - |
dc.identifier.citation | pp.171-174 | - |
dc.identifier.issn | 1434-6028 | - |
dc.identifier.other | 2009-OAK-0000011281 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/29194 | - |
dc.description.abstract | The chemical states of GeTe thin film are investigated using high-resolution X-ray photoelectron spectroscopy (HRXPS) with synchrotron radiation, during amorphous to crystalline structural phase transition. As the temperature increases from 250 to 400 degrees C, we observe the rock-salt crystalline structure and phase with X-ray diffraction (XRD) and transmission electron microscopy (TEM). Spin-orbit splitting of the Ge 3d core-level spectrum clearly appears after annealing at 400 degrees C for 5 min. However, the binding energy of the Ge 3d(5/2) core-level peak of 29.8 eV does not change in the amorphous to crystalline structural phase transition. In the case of the Te 4d core-level, change in binding energy and peak shapes is also negligible. We assume that the Te atom is fixed at a site between the amorphous and crystalline phases. Although the structural environment of the Ge atoms changes during the structural phase transition, the chemical environment does not. | - |
dc.description.statementofresponsibility | X | - |
dc.publisher | Springer | - |
dc.subject | X-RAY PHOTOEMISSION | - |
dc.subject | VALENCE BANDS | - |
dc.subject | MECHANISM | - |
dc.subject | MEMORY | - |
dc.title | Chemical states of GeTe thin-film during structural phase-change by annealing in ultra-high vacuum | - |
dc.type | Article | - |
dc.identifier.doi | 10.1140/EPJB/E2008-00400-X | - |
dc.author.google | Ko, C. | - |
dc.author.google | Lee, Y. M. | - |
dc.author.google | Shin, H. J. | - |
dc.author.google | Jung, M. -C. | - |
dc.author.google | Han, M. | - |
dc.author.google | Kim, K. | - |
dc.author.google | Park, J. C. | - |
dc.author.google | Song, S. A. | - |
dc.author.google | Jeong, H. | - |
dc.relation.volume | 66 | - |
dc.relation.issue | 2 | - |
dc.relation.startpage | 171 | - |
dc.relation.lastpage | 174 | - |
dc.publisher.location | US | - |
dc.relation.journal | EUROPEAN PHYSICAL JOURNAL B | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.docType | Article | - |
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