Remote plasma enhanced metal organic chemical vapor deposition of TiN for diffusion barrier

Abstract

TiN films were deposited with remote plasma metal organic chemical vapor deposition (MOCVD) from teirakis-diethyl-amido-titanium (TDEAT) at substrate temperature of 250-500 degrees C and plasma power of 20-80 W. The growth rate using N-2 plasma is slower than that with H-2 plasma and showed 9.33 kcal/mol of activation energy. In the range of 350-400 degrees C higher crystallinity and surface roughness were observed and resistivity was relatively low. As the temperature increased to 500 degrees C, randomely oriented structure and smooth surface with higher resistivity were obtained. At low deposition temperature, carbon was incorporated as TiC phase. as the deposition temperature increases, carbon was found as hydrocarbon. At 40 W of plasma power, higher crystallinity and rough surface with lower resistivity were obtained and increasing the plasma power to 80 W leads to low crystallinity, smooth surface and higher resistivity. It may be due to the incorporation of hydrocarbon decomposed in the gas phase. Surface roughness was found to be related to the crystallinity of the film.