IN-SITU INFRARED SPECTROSCOPIC STUDY ON THE ROLE OF SURFACE HYDRIDES AND FLUORIDES IN THE SILICON CHEMICAL-VAPOR-DEPOSITION PROCESS
SCIE
SCOPUS
- Title
- IN-SITU INFRARED SPECTROSCOPIC STUDY ON THE ROLE OF SURFACE HYDRIDES AND FLUORIDES IN THE SILICON CHEMICAL-VAPOR-DEPOSITION PROCESS
- Authors
- CHUNG, CH; MOON, SH; RHEE, SW
- Date Issued
- 1995-11
- Publisher
- AMER INST PHYSICS
- Abstract
- role of surface hydrides and fluorides in the Si chemical vapor deposition (CVD) process was studied by in situ Fourier transform infrared spectroscopy using a porous silicon film as the substrate, Hydrides protect the silicon surface from oxidation until they are desorbed at 350-400 degrees C. However, the hydrides are replaced almost completely by surface fluorides when SiH2F2 is used as a reactant in the CVD process at temperatures above 400 degrees C. The surface is then etched due to a reaction between the fluorides and the surface silicon, When the process temperature is lowered to 250 degrees C, the surface is covered by both hydrides and fluorides, and a silicon film is deposited. (C) 1995 American Vacuum Society.
- Keywords
- LOW-TEMPERATURE; EPITAXIAL-GROWTH; POROUS SILICON; FILMS; HYDROGEN; WATER; SIH4
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/29248
- DOI
- 10.1116/1.579470
- ISSN
- 0734-2101
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, vol. 13, no. 6, page. 2698 - 2702, 1995-11
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