Particle formation in the remote plasma enhanced chemical vapor deposition of Si films from Si2H6-SiF4-H-2

Abstract

SIF, was added to Si2H6-H-2 to enhance the crystallinity of Si films deposited at low temperatures around 400 degrees C in a remote plasma enhanced chemical vapor deposition reactor. A grid was inserted to detect the extent of powder formation as a function of operating variables. It was found that the fluorine chemistry reduced the amount of powder formation in the gas phase and helped crystallization at low temperatures. (C) 1996 American Vacuum Society.